首页 >2743021447>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

2743021447

RF Power Field Effect Transistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

Airfast RF Power LDMOS Transistor

Designedforhandheldtwo−wayradioapplicationswithfrequenciesfrom 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis devicemakeitidealforlarge−signal,common−sourceamplifierapplicationsin handheldradioequipment. Features •Characterizedforoperationf

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

2743021447

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

SM Beads (Differential- Mode)

FAIR-RITE

Fair-Rite Products Corp.

FAIR-RITE

2743021447

RF Power LDMOS Transistors

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

2743021447

Airfast RF Power LDMOS Transistor

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

2743021447

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

2743021447

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

2743021447

43 SM BEAD

FAIR-RITE

Fair-Rite Products Corp.

FAIR-RITE

2743021447

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

RF Power Field Effect Transistor

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

43 SM BEAD

FAIR-RITE

Fair-Rite Products Corp.

FAIR-RITE

2743021447

RF Power LDMOS Transistors

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

RF Power LDMOS Transistors

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

2743021447

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:2-SMD,J 形引线 类别:滤波器 铁氧体磁珠和芯片 描述:FERRITE BEAD 2SMD 1LN

FAIR-RITE

Fair-Rite Products Corp.

FAIR-RITE

2743021447_18

SM Beads (Differential- Mode)

FAIR-RITE

Fair-Rite Products Corp.

FAIR-RITE

产品属性

  • 产品编号:

    2743021447

  • 制造商:

    Fair-Rite Products Corp.

  • 类别:

    滤波器 > 铁氧体磁珠和芯片

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • DC 电阻 (DCR)(最大值):

    1.2 毫欧

  • 工作温度:

    -55°C ~ 125°C

  • 封装/外壳:

    2-SMD,J 形引线

  • 安装类型:

    表面贴装型

  • 高度(最大值):

    0.120"(3.05mm)

  • 大小 / 尺寸:

    0.378" 长 x 0.120" 宽(9.60mm x 3.05mm)

  • 描述:

    FERRITE BEAD 2SMD 1LN

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
154590
明嘉莱只做原装正品现货
询价
FR4
1342+
MFR=FAIRRITE
180000
EMI/RFISUPPRESSO
询价
FAIR-RITE
23+
SMD
7635
全新原装优势
询价
FAIRRITE
11+
SMD
4985
绝对低价现货!样品可售
询价
FAIR-RI
2020+
SMD
9489
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAIRRITE
16+
NA
8800
原装现货,货真价优
询价
FAIR-RITE
3800
原装正品现货供应
询价
FAIRRITE
07+
31200
询价
FREESCALE
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIR-RITE
2021+
N/A
6800
只有原装正品
询价
更多2743021447供应商 更新时间2024-4-27 18:06:00