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2743021447

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件:1.19064 Mbytes 页数:19 Pages

FREESCALEFreescale Semiconductor, Inc

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2743021447

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件:1.4439 Mbytes 页数:19 Pages

FREESCALEFreescale Semiconductor, Inc

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2743021447

Airfast RF Power LDMOS Transistor

Designed for handheld two−way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large−signal, common−source amplifier applications in handheld radio equipment. Features • Characterized for operation f

文件:195.94 Kbytes 页数:13 Pages

恩XP

恩XP

2743021447

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

文件:574.41 Kbytes 页数:15 Pages

FREESCALEFreescale Semiconductor, Inc

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2743021447

RF Power LDMOS Transistors

文件:1.43744 Mbytes 页数:27 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2743021447

RF Power LDMOS Transistors

文件:985.86 Kbytes 页数:21 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2743021447

43 SM BEAD

文件:150.03 Kbytes 页数:1 Pages

FAIR-RITE

2743021447

43 SM BEAD

文件:588.05 Kbytes 页数:5 Pages

FAIR-RITE

2743021447

SM Beads (Differential- Mode)

文件:1.55011 Mbytes 页数:3 Pages

FAIR-RITE

2743021447

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.19064 Mbytes 页数:19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

产品属性

  • 产品编号:

    2743021447

  • 制造商:

    Fair-Rite Products Corp.

  • 类别:

    滤波器 > 铁氧体磁珠和芯片

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • DC 电阻 (DCR)(最大值):

    1.2 毫欧

  • 工作温度:

    -55°C ~ 125°C

  • 封装/外壳:

    2-SMD,J 形引线

  • 安装类型:

    表面贴装型

  • 高度(最大值):

    0.120"(3.05mm)

  • 大小 / 尺寸:

    0.378" 长 x 0.120" 宽(9.60mm x 3.05mm)

  • 描述:

    FERRITE BEAD 2SMD 1LN

供应商型号品牌批号封装库存备注价格
FAIR-RI
25+
SMD
9489
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAIRRITE
16+
NA
8800
原装现货,货真价优
询价
FAIR-RITE
24+/25+
3800
原装正品现货库存价优
询价
FAIRRITE
24+
31200
询价
FAIRRITE
23+
NA
76367
专做原装正品,假一罚百!
询价
FAIRRITE
25+23+
SMD
35314
绝对原装正品全新进口深圳现货
询价
FAIRCHILD/仙童
2026+
SMD
28000
原厂原装仓库现货,欢迎咨询
询价
FAIR-RITE
三年内
1983
只做原装正品
询价
FAIR-RI
00+
SMD
8155
全新原装现货
询价
FAIR-RITEPRODUCTS
25+
SMD
12500
全新原装现货,假一赔十
询价
更多2743021447供应商 更新时间2026-4-22 8:22:00