2729GN-270V中文资料RF/Microwave GaN on SiC Power Devices, Pallets and Modules数据手册Microchip规格书

描述 Description

The 2729GN-270V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 15.3 dB gain, 270 Watts of pulsed RF output power at 200 ? S pulse width, 10% duty factor across the 2700 to 2900 MHz band. This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.Market Application – High Power S-Band Pulsed AESA Radar

简介

2729GN-270V属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的2729GN-270V晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。