Description

The SUPREMOS® MOSFET is ON Semiconductor’s next

generation of high voltage super−junction (SJ) technology employing

a deep trench filling process that differentiates it from the

conventional SJ MOSFETs. This advanced technology and precise

process control provides lowest Rsp on−resistance, superior switching

performance and ruggedness. SUPREMOS MOSFET is suitable for

high frequency switching power converter applications such as PFC,

server/telecom power, FPD TV power, ATX power, and industrial

power applications.

Features

• RDS(on) = 108 m (Typ.) @ VGS = 10 V, ID = 12.5 A

• Ultra Low Gate Charge (Typ. Qg = 57 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)

• 100 Avalanche Tested

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter

• AC−DC Power Supply