25LC040A-E/MS集成电路（IC）的存储器规格书PDF中文资料

25LC040A-E/MS属于集成电路（IC）的存储器。由美国微芯科技公司制造生产的25LC040A-E/MS存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description:

The Microchip Technology Inc. 25XX040A* is a 4 Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.

Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

The 25XX040A is available in standard packages including 8-lead PDIP and SOIC, and advanced packages including 8-lead MSOP, 8-lead TSSOP and rotated TSSOP, 8-lead 2x3 DFN and TDFN, and 6-lead SOT-23.

Features:

• Max. Clock 10 MHz

• Low-Power CMOS Technology:

- Max. Write Current: 5 mA at 5.5V, 10 MHz

- Read Current: 5 mA at 5.5V, 10 MHz

- Standby Current: 5 A at 5.5V

• 512 x 8-Bit Organization

• Write Page mode (up to 16 bytes)

• Sequential Read

• Self-timed Erase and Write Cycles (5 ms max.)

• Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

• Built-in Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

• High Reliability:

- Endurance: 1,000,000 Erase/Write cycles

- Data retention: >200 years

- ESD protection: >4000V

• Temperature Ranges Supported:

• Pb-Free and RoHS Compliant

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C