INPUT RECTIFIER DIODE

文件：142.63 Kbytes 页数：7 Pages

IRF

Input Rectifier Diode, 25 A

文件：157.53 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：25EY；Package：WSON(DSG)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：25EY；Package：WSON(DSG)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：25EY；Package：WSON(DSG)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：25EY；Package：WSON；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI

德州仪器

丝印：25EY；Package：WSON；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI

德州仪器

FUS 15.5KV MV E-RATED 25E CLIP LOCK

E-Rated fuses have time current characteristics designed to provide current limiting protection for power transformers, potential transformers, power centers, feeder centers, and unit sub stations. When properly applied, they can protect against high and low value fault currents.\n NEMA Standards fo

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成绎半导体