25AA1024T-I/MF集成电路（IC）的存储器规格书PDF中文资料

25AA1024T-I/MF属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的25AA1024T-I/MF存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description:

The Microchip Technology Inc. 25AA1024/25LC1024 (25XX1024*) is a 1024 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.

Features:

• 20 MHz max. Clock Speed

• Byte and Page-level Write Operations:

- 256 byte page

- 6 ms max. write cycle time

- No page or sector erase required

• Low-Power CMOS Technology:

- Max. Write current: 5 mA at 5.5V, 20 MHz

- Read current: 7 mA at 5.5V, 20 MHz

- Standby current: 1μA at 2.5V

(Deep power-down)

• Electronic Signature for Device ID

• Self-Timed Erase and Write Cycles:

- Page Erase (6 ms max.)

- Sector Erase (10 ms max.)

- Chip Erase (10 ms max.)

• Sector Write Protection (32K byte/sector):

- Protect none, 1/4, 1/2 or all of array

• Built-In Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

• High Reliability:

- Endurance: 1M erase/write cycles

• Temperature Ranges Supported:

• Pb-free packages available

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C