25AA040数据手册集成电路（IC）的存储器规格书PDF

特性 Features

• Low-power CMOS technology:\r
- Write current: 3 mA, typical\r
- Read current: 500 μA, typical\r
- Standby current: 500 nA, typical\r
• 512 x 8-bit organization\r
• 16 byte page\r
• Write cycle time: 5 ms max.\r
• Self-timed Erase and Write cycles\r
• Block write protection:\r
- Protect none, 1/4, 1/2 or all of array\r
• Built-in write protection:\r
- Power on/off data protection circuitry\r
- Write enable latch\r
- Write-protect pin\r
• Sequential read\r
• High reliability:\r
- Endurance: 1M cycles\r
- Data retention: > 200 years\r
- ESD protection: > 4000V\r
• 8-pin PDIP, SOIC and TSSOP packages\r
• Temperature ranges supported:\r
- Industrial (I): -40°C to +85°C\r
- Automotive (E) (25C040): -40°C to +125°C

简介

25AA040属于集成电路（IC）的存储器。由制造生产的25AA040存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。