OptiMOS™2 Power-Transistor

• Very low gate charge for high frequency applications\n• N-channel, normal level\n• Low on-resistance RDS(on)\n• Pb-free lead plating; RoHS compliant\n• Halogen-free according to IEC61249-2-21;

Infineon

英飞凌

丝印：252N10NS；Package：TDSON-8；OptiMOS?? Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qu

文件：419.52 Kbytes 页数：10 Pages

INFINEON

英飞凌

OptiMOS?? Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qu

文件：419.52 Kbytes 页数：10 Pages

INFINEON

英飞凌

ABRACON

上传：三奇股份有限公司

BGA

INTEL/英特尔

上传：深圳市昂芯微科技有限公司