CSD25202W15T

Marking：25202；Package：DSBGA；CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1Features 1•Low-Resistance •SmallFootprint1.5mm×1.5mm •GateESDProtection–3kV •PbFree •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection 3Description This21mΩ,20Vdeviceisdesignedtodeliverthe

CSD25304W1015

Marking：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice

CSD25304W1015.B

Marking：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice

CSD25304W1015T

Marking：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice

CSD25304W1015T.B

Marking：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice

DP25C160-SA-B

Marking：25C160；Package：TO-263-4L；HIGH VOLTAGE RECTIFIER DIODE

APPLICATIONS Snubberdiode Switchpowersupply AntiparalleDiodeforhighfrequ encyswitchingdevices FEATURES Lowpowerloss,highefficiency Highreliability RoHSproduct

FDC2512

Marking：252P；Package：SOT23-6；150V N-Channel Enhancement Mode MOSFET

Features BVDSS150V ID@VGS10V,TA=25°C1.5A RDS(ON)typ.@VGS-10V,ID-1.5A240mΩ

FDW2506P

Marking：2506P；Package：TSSOP-8；Dual P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisaruggedgateversionofFairchildsSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–5.3A,–20V,RDS(ON)=0.022Ω

FDW2509NZ

Marking：2509NZ；Package：TSSOP-8；Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofFairchild’sSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features ●7.1A,20V. RDS(ON)=20m

IGC025S08S1

Marking：25SD1；Package：PG-TSON-6；CoolGaNTM Transistor 80 V G3

Features •Enhancementmodepowertransistor-normallyOFFswitch •Noreverserecoverycharge •Reverseconductioncapability •Lowgatecharge,lowoutputcharge •QualifiedaccordingtoJEDECfortargetapplications