24LC08BHT-E/MNY集成电路（IC）的存储器规格书PDF中文资料

24LC08BHT-E/MNY属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的24LC08BHT-E/MNY存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description:

The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of only 1 μA and 1 mA, respectively. The 24XX08H also has a page write capability for up to 16 bytes of data. The 24XX08H is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, 2x3 TDFN and MSOP packages, and is also available in the 5-lead SOT-23 package. All packages are Pb-free and RoHS compliant.

Features:

• Single Supply with Operation Down to 1.7V for 24AA08H Devices, 2.5V for 24LC08BH Devices

• Low-Power CMOS Technology:

- Read current 1 mA, max.

- Standby current 1 μA, max.

• 2-Wire Serial Interface, I2C™ Compatible

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 3 ms, typical

• Self-Timed Erase/Write Cycle

• 16-Byte Page Write Buffer

• Hardware Write-Protect for Half-Array (200h-3FFh)

• ESD Protection >4,000V

• More than 1 Million Erase/Write Cycles

• Data Retention >200 years

• Factory Programming available

• Packages include 8-lead PDIP, SOIC, TSSOP, TDFN, MSOP and 5-lead SOT-23

• Pb-Free and RoHS Compliant

• Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C