24FC128-I/P集成电路（IC）的存储器规格书PDF中文资料

24FC128-I/P属于集成电路（IC）的存储器。由美国微芯科技公司制造生产的24FC128-I/P存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description:

The Microchip Technology Inc. 24AA024/24LC024/24AA025/24LC025 is a 2 Kbit Serial Electrically Erasable PROM with a voltage range of 1.7V to 5.5V. The device is organized as a single block of 256 x 8-bit memory with a 2-wire serial interface. Low current design permits operation with typical standby and active currents of only 1 μA and 1 mA, respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow the connection of up to eight 24AA024/24LC024/24AA025/24LC025 devices on the same bus for up to 16K bits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm), TSSOP, 2x3 DFN and TDFN and MSOP packages.

Features:

• Single Supply with Operation from 1.7V to 5.5V

for 24AA024/24AA025 Devices, 2.5V for 24LC024/24LC025 Devices

• Low-Power CMOS Technology:

- Read current 1 mA, typical

- Standby current 1 μA, typical

• 2-Wire Serial Interface, I2C™ Compatible

• Cascadable up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 5 ms Maximum

• Self-timed Erase/Write Cycle

• 16-Byte Page Write Buffer

• Hardware Write-Protect on 24XX024 Devices

• ESD Protection >4,000V

• More than 1 Million Erase/Write Cycles

• Data Retention >200 years

• Factory Programming Available

• Packages include 8-lead PDIP, SOIC, TSSOP, DFN, TDFN and MSOP

• Pb-Free and RoHS Compliant

• Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C