24AA64F-I/ST集成电路（IC）的存储器规格书PDF中文资料

24AA64F-I/ST属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的24AA64F-I/ST存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description:

The Microchip Technology Inc. 24AA64F/24LC64F (24XX64F*) is a 64 Kbit Electrically Erasable PROM. The device is organized as a single block of 8K x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and read currents of only 1 μA and 400 μA, respectively. It has been developed for advanced, low power applications such as personal communications or data acquisition. The 24XX64F also has a page write capability for up to 32 bytes of data. Functional address lines allow up to eight devices on the same bus, for up to 512 Kbits address space. The 24XX64F is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, TDFN and MSOP packages. The 24XX64F is also available in the 5-lead SOT-23 package.

Features:

• Single-Supply with Operation down to 1.7V for 24AA64F devices, 2.5V for 24LC64F devices

• Low-Power CMOS Technology:

- Read current 400 μA, max.

- Standby current 1 μA, max. (I-temp)

• 2-Wire Serial Interface, I2C™ Compatible

• Packages with 3 Address Pins are cascadable up to 8 Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 5 ms, typical

• Self-timed Erase/Write Cycle

• 32-Byte Page Write Buffer

• Hardware Write-protect for 1/4 Array (1800h-1FFFh)

• ESD Protection > 4,000V

• More than 1 Million Erase/Write Cycles

• Data Retention > 200 Years

• Factory Programming Available

• Packages include 8-lead PDIP, SOIC, TSSOP, MSOP, TDFN, 5-lead SOT-23

• Pb-Free and RoHS Compliant

• Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C