Features

• Single Supply with Operation Down to 1.7V for

24AA256 and 24FC256 Devices, 2.5V for

24LC256 Devices

• Low-Power CMOS Technology:

- Write current: 3 mA, maximum

- Standby current: 1 μA maximum (I-temp.)

• Two-Wire Serial Interface, I2C Compatible

• Cascadable up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz, 400 kHz and 1 MHz Compatibility

• Page Write Time: 5 ms, maximum

• Self-Timed Erase/Write Cycle

• 64-Byte Page Write Buffer

• Hardware Write-Protect

• ESD Protection >4000V

• More than One Million Erase/Write Cycles

• Data Retention >200 years

• Factory Programming Available

• RoHS Compliant

• Temperature Ranges:

• Automotive AEC-Q100 Qualified

- Industrial (I): -40C to +85C

- Extended (E): -40C to +125C

24AA256T-E/MNY属于集成电路（IC） > 存储器。微芯科技股份有限公司制造生产的24AA256T-E/MNY存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。