24AA08T集成电路（IC）的存储器规格书PDF中文资料

24AA08T属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的24AA08T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description:

The Microchip Technology Inc. 24CXX, 24LCXX, 24AAXX and 24FCXX (24XX*) devices are a family of 128-bit through 512 Kbit Electrically Erased PROMs. The devices are organized in blocks of x8-bit memory with 2-wire serial interfaces. Low-voltage design permits operation down to 1.7V (for 24AAXX devices), with standby and active currents of only 1 μA and 1 mA, respectively. Devices 1 Kbit and larger have page write capability. Parts having functional address lines allow connection of up to 8 devices on the same bus. The 24XX family is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP and MSOP pack ages. Most 128-bit through 16 Kbit devices are also available in the 5-lead SOT-23 package. DFN packages (2x3mm or 5x6mm) are also available. All packages are Pb-free (Matte Tin) finish.

Features:

• 128-bit through 512 Kbit devices

• Single supply with operation down to 1.7V for 24AAXX devices

• Low-power CMOS technology:

- 1 mA active current, typical

-1μA standby current, typical (I-temp)

• 2-wire serial interface bus, I2C™ compatible

• Schmitt Trigger inputs for noise suppression

• Output slope control to eliminate ground bounce

• 100 kHz (1.7V) and 400 kHz (≥ 2.5V) compatibility

• 1 MHz for 24FCXX products

• Self-timed write cycle (including auto-erase)

• Page write buffer

• Hardware write-protect available on most devices

• Factory programming (QTP) available

• ESD protection > 4,000V

• 1 million erase/write cycles

• Data retention > 200 years

• 8-lead PDIP, SOIC, TSSOP and MSOP packages

• 5-lead SOT-23 package (most 1-16 Kbit devices)

• 8-lead 2x3mm and 5x6mm DFN packages available

• Pb-free and RoHS compliant

• Available for extended temperature ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C