24AA02E48T-I/SN集成电路（IC）的存储器规格书PDF中文资料

24AA02E48T-I/SN属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的24AA02E48T-I/SN存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The Microchip Technology Inc. 24AA02E48/24AA025E48/24AA02E64/24AA025E64 (24AA02XEXX) is a 2 Kbit Electrically Erasable PROM. The device is organized as two blocks of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with maximum standby currents of only 1 µA for I-Temp. and 5 µA for E-Temp., as well as a maximum active current of 1 mA. The 24AA02XEXX also has a page write capability for up to eight bytes of data (16 bytes on the 24AA025E48/24AA025E64). The 24AA02XEXX is available in the standard 8-pin SOIC, 5-lead SOT-23, and 6-lead SOT-23 packages.

特性 Features

• Pre-Programmed Globally Unique, 48-bit or 64-bit Node Address

• Compatible with EUI-48™ and EUI-64™

• Single Supply with Operation Down to 1.7V

• Low-Power CMOS Technology:

- Read current 1 mA, maximum

- Standby current: 1 µA, maximum (I-Temp.)

5 µA, maximum (E-Temp.)

• 2-Wire Serial Interface, I2C Compatible

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 3 ms, typical

• Self-Timed Erase/Write Cycle

• Page Write Buffer:

- 8-byte page (24AA02E48/24AA02E64)

- 16-byte page (24AA025E48/24AA025E64)

• ESD Protection >4,000V

• More than 1 Million Erase/Write Cycles

• Data Retention >200 Years

• Factory Programming Available

• Available Packages:

- 8-lead SOIC and 5-lead SOT-23 (24AA02E48/24AA02E64)

- 8-lead SOIC and 6-lead SOT-23 (24AA025E48/24AA025E64)

• RoHS Compliant

• Available for Extended Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C