24AA014H-I/ST集成电路（IC）的存储器规格书PDF中文资料

24AA014H-I/ST属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的24AA014H-I/ST存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description:

The Microchip Technology Inc. 24AA014H/24LC014H is a 1 Kbit Serial Electrically Erasable PROM with operation down to 1.7V. The device is organized as a single block of 128 x 8-bit memory with a 2-wire serial interface. Low-current design permits operation with maximum standby and active currents of only 1 μA and 400 μA, respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow the connection of up to eight 24AA014H/ 24LC014H devices on the same bus for up to 8 Kbits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (150 mil), TSSOP, 2x3 TDFN and MSOP packages.

Features:

• Single-Supply with Operation down to 1.7V

• Low-Power CMOS Technology:

- 400 μA active current, maximum

- 1 μA standby current, maximum (I-temp)

• Organized as a Single Block of 128 Bytes(128 x 8)

• 2-Wire Serial Interface Bus, I2C™ Compatible

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Compatibility

• 1 MHz Compatibility (LC)

• Page Write Buffer for up to 16 Bytes

• Self-Timed Write Cycle (including Auto-Erase)

• Hardware Write Protection for Half Array(40h-7Fh)

• Address Lines Allow up to Eight Devices on Bus

• 1 Million Erase/Write Cycles

• ESD Protection > 4,000V

• Data Retention > 200 Years

• Factory Programming (QTP) Available

• Pb-Free and RoHS Compliant

• 8-pin PDIP, SOIC, TSSOP, TDFN and MSOP Packages

• Available for Extended Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C