MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on)1 = 70 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (VGS = 4 V, ID = 5.0 A) • Low Ciss: Ci

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0.56 Ω On Resistance High Density Octal SPST Switch

GENERAL DESCRIPTION The ADGS2414D contains eight independent, low on-resistance, single-pole/single-throw (SPST) switches in a 4 mm x 5 mm, 30 pin LGA package. The ADGS2414D enables higher channel density in systems where printed circuit board space is constrained or existing system form fac

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0.56 Ω On Resistance High Density Octal SPST Switch

GENERAL DESCRIPTION The ADGS2414D contains eight independent, low on-resistance, single-pole/single-throw (SPST) switches in a 4 mm x 5 mm, 30 pin LGA package. The ADGS2414D enables higher channel density in systems where printed circuit board space is constrained or existing system form fac

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Low-Cost, 820 nm Miniature Link Fiber Optic Components with ST, SMA, SC, and FC Ports

Features  RoHS compliant  Low-cost transmitters and receivers  Choice of ST, SMA, SC, or FC ports  820 nm wavelength technology  Signal rates up to 160 MBaud  Link distances up to several kilometers  Compatible with 50/125 μm, 62.5/125 μm, 100/140 μm, and 200 μm Plastic-Clad Silica (

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