23LCV512数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The Microchip Technology Inc. 23LCV512 are 512 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) is supported if your application needs faster data rates. The SRAM can be battery backed via the Vbat pin essentially making the SRAM non-volatile. The device also supports unlimited read and write cycles to the array. The 23LCV512 is available in standard packages including 8-lead SOIC, PDIP and advanced 8-lead TSSOP.

特性 Features

SPI-compatible Bus Interface- 20 MHz Clock rate- SPI/SDI Mode
Low-Power CMOS Technology:- Read Current: 3 mA at 3.6V, 20 MHz- Standby Current: 4 uA Max. at +85°C
Unlimited read and write cycles
Zero write time
64K x 8-bit organization- 32 Byte Page
Battery-backed SRAM Support via Vbat Pin- Automatic switchover to Vbat
Sequential Mode reads and writes
High Reliability
Temperature Ranges Supported: -40C to +85C
Pb-Free and RoHS Compliant, Halogen Free
8 Lead SOIC, TSSOP and PDIP Packages

简介

23LCV512属于集成电路（IC）的存储器。由制造生产的23LCV512存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。