丝印：2301C；Package：DFN2020-6L；P-Channel Enhancement Mode Field Effect Transistor

文件：575.97 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

P-Channel Enhancement Mode Power MOSFET

Description The 2301H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：857.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The 2301HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：848.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

High Current Toroid Inductors

文件：112.13 Kbytes 页数：1 Pages

BOURNS

伯恩斯