Advanced LinCMOS RAIL-TO-RALIL VERY-LOW-POWER OPERATIONAL AMPLIFIERS

文件：1.27758 Mbytes 页数：39 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.01802 Mbytes 页数：41 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.01802 Mbytes 页数：41 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY-LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.039589 Mbytes 页数：41 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY-LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.039589 Mbytes 页数：41 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY-LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.039589 Mbytes 页数：41 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.01802 Mbytes 页数：41 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY-LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.039589 Mbytes 页数：41 Pages

TI

德州仪器

丝印：2252AE；Package：SOIC；Advanced LinCMOS™ RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：1.01802 Mbytes 页数：41 Pages

TI

德州仪器