HiPerFET™ Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family • International standard packages\n• Rugged polysilicon gate cell structure\n• Low package inductance\n• Fast intrinsic RectifierApplications\n• Synchronous rectification\n• Switched-mode and resonant-mode power supplies\n• AC motor control\n• Low voltage relays;

Littelfuse

力特

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications

文件：1.29179 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：21N50C3；Package：PG-TO263；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications

文件：1.29179 Mbytes 页数：12 Pages

Infineon

英飞凌

N-CHANNEL SILICON POWER MOSFET

文件：555.21 Kbytes 页数：5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：549.77 Kbytes 页数：5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：545.95 Kbytes 页数：5 Pages

Fuji

富士通