丝印：215；Package：SOD-123S；2A Surface Mount Schottky Barrier Rectifiers

Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-fre

文件：91.46 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：215；Package：SOD-123ST；2A Surface Mount Schottky Barrier Rectifiers

Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-fre

文件：104.02 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：215；2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

文件：487.27 Kbytes 页数：2 Pages

PACELEADER

霈峰

丝印：215300B00；Package：QFN；High Performance 9-Channel PMIC Supporting DDR Memory, with Built-In Charger and RTC

▪ Input operating voltage range: 2.7V to 5.5V ▪ 6 synchronous buck regulators (supporting 5A, 3.5A, 2x1.5A, 1A, 0.6A), with settable VOUT ▪ 3 LDOs (supporting 2x300mA, 50mA), with bypass mode, and settable VOUT ▪ Dedicated VTTREF for DDR memory ▪ Auto PFM/PWM, FPWM and ultrasonic modes, wit

文件：1.37048 Mbytes 页数：124 Pages

RENESAS

瑞萨

丝印：215300B01；Package：QFN；High Performance 9-Channel PMIC Supporting DDR Memory, with Built-In Charger and RTC

▪ Input operating voltage range: 2.7V to 5.5V ▪ 6 synchronous buck regulators (supporting 5A, 3.5A, 2x1.5A, 1A, 0.6A), with settable VOUT ▪ 3 LDOs (supporting 2x300mA, 50mA), with bypass mode, and settable VOUT ▪ Dedicated VTTREF for DDR memory ▪ Auto PFM/PWM, FPWM and ultrasonic modes, wit

文件：1.37048 Mbytes 页数：124 Pages

RENESAS

瑞萨

丝印：215300C02；Package：QFN；High Performance 9-Channel PMIC Supporting DDR Memory, with Built-In Charger and RTC

▪ Input operating voltage range: 2.7V to 5.5V ▪ 6 synchronous buck regulators (supporting 5A, 3.5A, 2x1.5A, 1A, 0.6A), with settable VOUT ▪ 3 LDOs (supporting 2x300mA, 50mA), with bypass mode, and settable VOUT ▪ Dedicated VTTREF for DDR memory ▪ Auto PFM/PWM, FPWM and ultrasonic modes, wit

文件：1.37048 Mbytes 页数：124 Pages

RENESAS

瑞萨

丝印：215300C03；Package：QFN；High Performance 9-Channel PMIC Supporting DDR Memory, with Built-In Charger and RTC

▪ Input operating voltage range: 2.7V to 5.5V ▪ 6 synchronous buck regulators (supporting 5A, 3.5A, 2x1.5A, 1A, 0.6A), with settable VOUT ▪ 3 LDOs (supporting 2x300mA, 50mA), with bypass mode, and settable VOUT ▪ Dedicated VTTREF for DDR memory ▪ Auto PFM/PWM, FPWM and ultrasonic modes, wit

文件：1.37048 Mbytes 页数：124 Pages

RENESAS

瑞萨

丝印：215300B05；Package：QFN；High Performance 9-Channel PMIC Supporting DDR Memory, with Built-In Charger and RTC

▪ Input operating voltage range: 2.7V to 5.5V ▪ 6 synchronous buck regulators (supporting 5A, 3.5A, 2x1.5A, 1A, 0.6A), with settable VOUT ▪ 3 LDOs (supporting 2x300mA, 50mA), with bypass mode, and settable VOUT ▪ Dedicated VTTREF for DDR memory ▪ Auto PFM/PWM, FPWM and ultrasonic modes, wit

文件：1.37048 Mbytes 页数：124 Pages

RENESAS

瑞萨

丝印：215300C07；Package：QFN；High Performance 9-Channel PMIC Supporting DDR Memory, with Built-In Charger and RTC

▪ Input operating voltage range: 2.7V to 5.5V ▪ 6 synchronous buck regulators (supporting 5A, 3.5A, 2x1.5A, 1A, 0.6A), with settable VOUT ▪ 3 LDOs (supporting 2x300mA, 50mA), with bypass mode, and settable VOUT ▪ Dedicated VTTREF for DDR memory ▪ Auto PFM/PWM, FPWM and ultrasonic modes, wit

文件：1.37048 Mbytes 页数：124 Pages

RENESAS

瑞萨

丝印：215300C08；Package：QFN；High Performance 9-Channel PMIC Supporting DDR Memory, with Built-In Charger and RTC

▪ Input operating voltage range: 2.7V to 5.5V ▪ 6 synchronous buck regulators (supporting 5A, 3.5A, 2x1.5A, 1A, 0.6A), with settable VOUT ▪ 3 LDOs (supporting 2x300mA, 50mA), with bypass mode, and settable VOUT ▪ Dedicated VTTREF for DDR memory ▪ Auto PFM/PWM, FPWM and ultrasonic modes, wit

文件：1.37048 Mbytes 页数：124 Pages

RENESAS

瑞萨