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21009BFZ25

型号:ISL21009BFB825Z;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009BFZ41

型号:ISL21009BFB841Z;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009BFZ50

型号:ISL21009BFB850Z;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009BM25EP

型号:ISL21009BMB825EP;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •SpecificationsperDSCCVIDV62/08629 •FullMil-TempElectricalPerformancefrom-55°Cto+125°C •ControlledBaselinewithOneWaferFabricationSiteand OneAssembly/TestSite •FullHomogeneousLotProcessinginWaferFab •NoCombinationofWaferFabricationLotsinAssembly

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009BM41EP

型号:ISL21009BMB841EP;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •SpecificationsperDSCCVIDV62/08629 •FullMil-TempElectricalPerformancefrom-55°Cto+125°C •ControlledBaselinewithOneWaferFabricationSiteand OneAssembly/TestSite •FullHomogeneousLotProcessinginWaferFab •NoCombinationofWaferFabricationLotsinAssembly

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009BM50EP

型号:ISL21009BMB850EP;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •SpecificationsperDSCCVIDV62/08629 •FullMil-TempElectricalPerformancefrom-55°Cto+125°C •ControlledBaselinewithOneWaferFabricationSiteand OneAssembly/TestSite •FullHomogeneousLotProcessinginWaferFab •NoCombinationofWaferFabricationLotsinAssembly

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009CFZ12

型号:ISL21009CFB812Z;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009CFZ25

型号:ISL21009CFB825Z;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009CFZ41

型号:ISL21009CFB841Z;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

21009CFZ50

型号:ISL21009CFB850Z;Package:SOIC;High Voltage Input Precision, Low Noise FGA™ Voltage References

Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
询价
Comchip Technology
25+
SMB/DO-214AA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
COMCHIP
1809+
DO-214
3675
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询价
Comchip
22+
NA
2830
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询价
更多2100供应商 更新时间2025-7-29 11:06:00