丝印：2011；Package：TSSOP-8；Dual N-Channel Enhancement Mode MOSFET

■ Features ● RDS(ON)=30mΩ Max. @VGS=4V ● RDS(ON)=45mΩ Max. @VGS=2.5V

文件：80.12 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：2011；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2011；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2011；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2011；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2011D118；Package：SOIC；Gas Gauge IC for High Discharge Rates

Features ➤ Conservative and repeatable measurement of available charge in rechargeable batteries ➤ Designed for portable equipment such as power tools with high discharge rates ➤ Designed for battery pack integration - 120μA typical standby current (self-discharge estimation mode) - Smal

文件：338.91 Kbytes 页数：24 Pages

TI

德州仪器

丝印：2011D118；Package：SOIC；Gas Gauge IC for High Discharge Rates

Features ➤ Conservative and repeatable measurement of available charge in rechargeable batteries ➤ Designed for portable equipment such as power tools with high discharge rates ➤ Designed for battery pack integration - 120μA typical standby current (self-discharge estimation mode) - Smal

文件：338.91 Kbytes 页数：24 Pages

TI

德州仪器

丝印：2011HY；Package：SO8；High temperature, high voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3% max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shut

文件：3.11587 Mbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

丝印：2011S；Package：8-PinSOIC；Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators

文件：1.67471 Mbytes 页数：21 Pages

3PEAK

思瑞浦

2011 Series - Fast Acting GDT Surge Arrestor with FLAT® Technology

Features ■ Bourns® FLAT® GDT technology ■ Improved impulse performance ■ Flexible mounting options ■ Stable breakdown throughout life ■ Volume- and space-saving design ■ UL Recognized ■ RoHS compliant* and halogen free** Applications ■ Telecommunications ■ Industrial Communications ■

文件：187.15 Kbytes 页数：4 Pages

Bourns

伯恩斯