Small-signal Schottky barrier diode

Feature：Low leakage current\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Average Forward Current IO 0.2 A \nReverse Voltage VR 30 V ;

Toshiba

东芝

High-Speed Switching Applications

文件：147.01 Kbytes 页数：3 Pages

TOSHIBA

东芝

SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere

VOLTAGE 85 Volts CURRENT 0.15 Ampere FEATURE * Small surface mounting type. (SC-79/SOD-523) * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 300mW. * Peak forward current is 500mA. APPLICATION * Ultra high speed switching

文件：78.23 Kbytes 页数：2 Pages

CHENMKO

力勤

Silicon Epitaxial Planar Schottky Barrier Diode

文件：123.23 Kbytes 页数：3 Pages

ZSELEC

淄博圣诺

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications

文件：130.33 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

Silicon Epitaxial Schottky Barrier Type High-Speed Switching Applications

文件：128.25 Kbytes 页数：3 Pages

TOSHIBA

东芝