GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：2.79285 Mbytes 页数：78 Pages

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40V 10mA Schottky Diode

Features  Ultra-low leakage current  Low forward voltage  40V br eakdown voltage  Guard-ring for over-voltage protection  High reliability tested grades & matched characteristic options.

文件：326.74 Kbytes 页数：3 Pages

SS

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

文件：41.79 Kbytes 页数：1 Pages

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GERMANIUM DIODES

Gold Bonded Germanium Diodes in DO-7 Package

文件：136.03 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GERMANIUM DIODES

Gold Bonded Germanium Diodes in DO-7 Package

文件：136.03 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GOLD BONDED DIODES

Gold Bonded Germanium Diodes in DO-7 Package

文件：90.73 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

文件：41.79 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：2.79285 Mbytes 页数：78 Pages

ETCList of Unclassifed Manufacturers

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FAST RECTIIFIER

文件：78.49 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Si Schottky Rectifier Diodes

\"This Defense Logistics Agency (DLA) qualified Schottky diodes offer great value for aerospace and defense applications requiring high density power and excellent heat dissipation (typically 0.85- 0.95 degrees C per Watt (C/W)).  The 1N6910UTK2AS through 1N6912UTK2AS device polarity is anode-to-str

Microchip

微芯科技