1N6663数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

This “standard recovery” rectifier diode is military qualified to MIL-PRF-19500/587 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 500 mA rated rectifiers for working peak reverse voltages from 225 to 600 volts are hermetically sealed with void-less-glass construction using an internal “Category I” metallurgical bond. The surface mount MELF package configurations are also available by adding a “US” suffix (see separate data sheet for 1N6661US thru 1N6663US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

特性 Features

Popular JEDEC registered 1N6661 thru 1N6663 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 225 to 600 Volts
JAN, JANTX, and JANTXV available per MIL-PRF19500/587
Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (also see 1N6661US thru 1N6663US)
Standard recovery 0
5 Amp rectifiers 225 to 600V
Military and other high-reliability applications
General rectifier applications including bridges, halfbridges, catch diodes, etc
Forward surge current capability
Extremely robust construction
Low thermal resistance in small DO-35 package
Inherently radiation hard as described in Microchip MicroNote 050

简介

1N6663属于分立半导体产品的二极管-整流器-单。由制造生产的1N6663二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。