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1N6631中文资料PDF规格书

1N6631
厂商型号

1N6631

参数属性

1N6631 封装/外壳为A,轴向;包装为散装;类别为分立半导体产品 > 二极管 - 整流器 - 单;产品描述:DIODE GEN PURP 1.1KV 1.4A AXIAL

功能描述

ULTRA FAST RECTIFIERS

文件大小

100.26 Kbytes

页面数量

2

生产厂商 Microsemi Corporation
企业简称

Microsemi美高森美

中文名称

美高森美公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-17 11:14:00

1N6631规格书详情

DESCRIPTION

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6626US thru 1N6631US).

FEATURES

• Popular JEDEC registered 1N6626 to 1N6631 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• JAN, JANTX, and JANTXV available per MIL-PRF- 19500/590

• Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e.g. SP6626, SP6629, etc.

• Surface mount equivalents also available in a square endcap MELF configuration with “US” suffix (see separate data sheet for 1N6626US thru 1N6631US)

APPLICATIONS / BENEFITS

• Ultrafast recovery rectifier series 200 to 1000 V

• Military and other high-reliability applications

• Switching power supplies or other applications requiring extremely fast switching & low forward loss

• High forward surge current capability

• Low thermal resistance

• Controlled avalanche with peak reverse power capability

• Inherently radiation hard as described in Microsemi MicroNote 050

产品属性

  • 产品编号:

    1N6631

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    散装

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    1.4A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    40pF @ 10V,1MHz

  • 安装类型:

    通孔

  • 封装/外壳:

    A,轴向

  • 工作温度 - 结:

    -65°C ~ 150°C

  • 描述:

    DIODE GEN PURP 1.1KV 1.4A AXIAL

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
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原包装原标现货,假一罚十,
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