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1N6080US中文资料PDF规格书

1N6080US
厂商型号

1N6080US

参数属性

1N6080US 封装/外壳为SQ-MELF,G;包装为散装;类别为分立半导体产品 > 二极管 - 整流器 - 单;产品描述:DIODE GEN PURP 100V 2A G-MELF

功能描述

VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS

文件大小

126.58 Kbytes

页面数量

3

生产厂商 Microsemi Corporation
企业简称

Microsemi美高森美

中文名称

美高森美公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-11 19:02:00

1N6080US规格书详情

DESCRIPTION

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/503 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in different package sizes for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

FEATURES

• Popular JEDEC registered 1N6073 to 1N6081 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• JAN, JANTX, and JANTXV available for 1N6074 and 1N6075 per MIL-PRF-19500/503

• Further options for screening in accordance with MIL

PRF-19500 for JAN, JANTX, JANTXV, or JANS by

using a MQ, MX, MV or SP prefix respectively , e.g.

MX6076, MV6079, SP6081, etc.

• Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix

APPLICATIONS / BENEFITS

• Ultrafast recovery rectifier series 50 to 150 V

• Military and other high-reliability applications

• Switching power supplies or other applications requiring extremely fast switching & low forward loss

• High forward surge current capability

• Low thermal resistance

• Controlled avalanche with peak reverse power capability

• Inherently radiation hard as described in Microsemi MicroNote 050

产品属性

  • 产品编号:

    1N6080US

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    散装

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    2A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    SQ-MELF,G

  • 供应商器件封装:

    G-MELF(D-5C)

  • 工作温度 - 结:

    -65°C ~ 155°C

  • 描述:

    DIODE GEN PURP 100V 2A G-MELF

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