1N5921BRL分立半导体产品的二极管-齐纳-单规格书PDF中文资料

1N5921BRL属于分立半导体产品的二极管-齐纳-单。由安森美半导体制造生产的1N5921BRL二极管 - 齐纳 - 单齐纳二极管可用于以反向击穿模式工作，并根据以这种方式使用时的行为来分类。这些器件可用作电压基准或限压用途，还可以用作类似于整流二极管的单向电流阀，但它们在这种模式下的性能通常不如专用器件理想。该系列产品的每个器件封装恰好实现该功能的一个实例。

This is a complete series of 3 W Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead,

transfer−molded plastic package that offers protection in all common environmental conditions.

特性 Features

•Zener Voltage Range − 3.3 V to 200 V

•ESD Rating of Class 3 (>16 KV) per Human Body Model

•Surge Rating of 98 W @ 1 ms

•Maximum Limits Guaranteed on up to Six Electrical Parameters

•Package No Larger than the Conventional 1 W Package

•Pb−Free Packages are Available