Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

Features

• Extremely Low VF

• Low Power Loss/High Efficiency

• Low Stored Charge, Majority Carrier Conduction

• Shipped in plastic bags, 500 per bag

• Available in Tape and Reel, 1500 per reel, by adding a “RL suffix to

the part number

• Pb-Free Packages are Available*

1N5820G属于分立半导体产品 > 二极管 - 整流器 - 单。安森美半导体公司制造生产的1N5820G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。