1N5819B-G中文资料典琦数据手册PDF规格书
1N5819B-G规格书详情
Features
- Epitaxial construction.
- Low forward voltage drop.
- Metal-Semiconductor junction with guard ring.
- High current capability.
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/GC |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
VISHAY/威世 |
2023+ |
DO-41 |
6895 |
原厂全新正品旗舰店优势现货 |
询价 | ||
DIODES |
DIP |
1800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
VISHAY/威世 |
08+ |
DO-41 |
116 |
询价 | |||
VISHAY |
21+ |
DO-41 |
324 |
原装现货假一赔十 |
询价 | ||
DO-214SMA |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
VISHAY |
25+23+ |
DO-41 |
28079 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Vishay/GeneralSemiconduc |
24+ |
DO-41 |
22551 |
询价 | |||
VISHAY |
新 |
4800 |
全新原装 货期两周 |
询价 | |||
VISHAY/威世 |
22+ |
DO-41 |
25000 |
只做原装进口现货,专注配单 |
询价 |
