1N5818中文资料30 V，1.0 A，肖特基整流器数据手册ONSEMI规格书

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

特性 Features

• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency Mechanical CharacteristicsMechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a \"RL\" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5817, 1N5818, 1N5819
• Lead Temperature for Soldering Purposes: 260°C Max for 10 seconds
• These are Pb-Free Devices

简介

1N5818属于分立半导体产品的二极管-整流器-单。由制造生产的1N5818二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。