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1N5620-TR中文资料Rectifier Diode Switching 2-Pin 800V, 1A, 2000ns Case A Bag T/R数据手册Microchip规格书

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厂商型号

1N5620-TR

功能描述

Rectifier Diode Switching 2-Pin 800V, 1A, 2000ns Case A Bag T/R

制造商

Microchip Microchip Technology

中文名称

微芯科技 美国微芯科技公司

数据手册

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更新时间

2025-9-28 18:28:00

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1N5620-TR规格书详情

描述 Description

This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

特性 Features

Popular JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts
JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427
Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5614US thru 1N5622US)
Popular JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts
JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427
Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).

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