1N5251BTR数据手册分立半导体产品的二极管-齐纳-单规格书PDF

描述 Description

General Data Applicable to all series in this group. 500 MilliwattHermetically SealedGlass Silicon Zener Diodes

特性 Features

• Complete Voltage Range - 1.8 to 200 Volts
• Wide Range of Zener Breakdown Voltages
• 2% and 5% tolerances available
• DO-204AH Package - Smaller than Conventional DO-204AA Package
• Double Slug Type Construction
• Metallurgically Bonded ConstructionMechanical Characteristics:
• CASE: Double slug type, hermetically sealed glass
• MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230?C, 1/16\", from case for 10 seconds
• FINISH: All external surfaces are corrosion resistant with readily solderable leads
• POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode
• MOUNTING POSITION: Any
• WAFER FAB LOCATION: Phoenix, Arizona
• ASSEMBLY/TEST LOCATION: Seoul, Korea

应用 Application

• Voltage Regulation
• Waveform Clipping
• MOSFET Gate Protection
• General Usage Device: Suitable for many different end products

简介

1N5251BTR属于分立半导体产品的二极管-齐纳-单。由制造生产的1N5251BTR二极管 - 齐纳 - 单齐纳二极管可用于以反向击穿模式工作，并根据以这种方式使用时的行为来分类。这些器件可用作电压基准或限压用途，还可以用作类似于整流二极管的单向电流阀，但它们在这种模式下的性能通常不如专用器件理想。该系列产品的每个器件封装恰好实现该功能的一个实例。