1N4707

Silicon Epitaxial Planar Z-Diodes

Features Zenervoltagespecifiedat50
A MaximumdeltaVZgivenfrom10
Ato100
A Veryhighstability Lownoise Applications Voltagestabilization

1N4707

ZENER DIODES

FEATURES ♦SiliconPlanarZenerDiodes ♦StandardZenervoltagetoleranceis±5.Othertolerancesareavailableuponrequest. ♦Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlength. ♦ThesediodesarealsoavailableinSOD-123casewiththetypedesignation

1N4707

SILICON 250 mW ZENER DIODES

DESCRIPTION The1N4678thru1N4717seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom1.8to43voltsinstandard5tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-7Zenersalsohaveaninternal-m

1N4707

ZENER DIODES

ZenerDiodes Features •500mWPowerDissipation •HighStability •ZenerVoltagefrom3.3Vto39V •Hightemperaturesolderingguaranteed265°C/10seconds /.037(9.5mm)leadlength, •RoHScompliant

1N4707

500mW Silicon Zener Diodes

Features •ZenerVoltage1.8Vto43V •VerySharpReverseCharacteristic •VZ–tolerance±5standard •HighReliability

1N4707

50 uA, LOW OPERATING CURRENT, ZENER DIODE

1N4678thru1N4717 ●50μA,LOWOPERATINGCURRENT,ZENERDIODE ●DOUBLEPLUGCONSTRUCTION ●METALLURGICALLYBONDED

1N4707

50 uA, LOW OPERATING CURRENT, ZENER DIODES

•50µA,LOWOPERATINGCURRENT,ZENERDIODES •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED MAXIMUMRATINGS OperatingTemperature:-65°Cto+175°C StorageTemperature:-65°Cto+175°C PowerDissipation:500mW@+50°C DCPowerDerating:4mW/°Cabove+50°C ForwardV

1N4707

LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 關A - LOW LEAKAGE

LOWLEVELZENERDIODES ULTRA-LOWCURRENT:50µA-LOWLEAKAGE

1N4707

500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators

SpecificationFeatures: ■ZenerVoltageRange=1.8Vto43V ■ESDRatingofClass3(>6KV)perHumanBodyModel ■DO-35Package(DO-204AH) ■DoubleSlugTypeConstruction ■MetallurgicalBondedConstruction ■RoHSCompliant ■SolderHotDipTin(Sn)LeadFinish SpecificationFeatures:

1N4707

ZENER DIODES

VZ:1.8-43V PD:500mW FEATURES: *Zenervoltagespecifiedat50µA *MaximumdeltaVZgivenfrom10µAto100µA *Veryhighstability *Lownoise *Pb/RoHSFree