SILICON 400mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

文件：109.42 Kbytes 页数：2 Pages

Microsemi

美高森美

Hermetically sealed glass case. DO - 35 outline.

• 1N4614-1THRU 1N4627-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LOW CURRENT OPERATION AT 250 µA • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

文件：120.09 Kbytes 页数：2 Pages

Microsemi

美高森美

SILICON 500mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

文件：86.51 Kbytes 页数：2 Pages

Microsemi

美高森美

500mW Silicon Zener Diodes

Features • Zener Voltage Range = 1.8V to 47V • Double Slug Type Construction • Metallurgical Bonded Construction • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Moisture Sensitivity: Level 1

文件：265.53 Kbytes 页数：5 Pages

MCC

500mW LOW NOISE SILION ZENER DIODES

VOLTAGE RANGE 1.8 to 100 Volts FEATURES * Zener voltage 1.8 to 100 V * Low noise * Low reverse leakage

文件：181.54 Kbytes 页数：2 Pages

JGD

固锝电子

LOW LEVEL ZENER DIODES LOW CURRENT: 250關A - LOW NOISE

1. Package Style DO-7 2. Vz tolerance: ± 5 3. Forward Voltage (VF) Maximum 1.0 Vdc (1N4614 – 1N4627 IF = 100 mA; 1N4099 – 1N4121 IF = 200 mA) 4. Noise Density measured from 1000 to 3000 Hz. 5. MILITARY SCREENING AVAILABLE

文件：37.88 Kbytes 页数：1 Pages

KNOX

400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES

400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES

文件：196.46 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

LOW CURRENT OPERATION AT 250 uA

• 1N4614-1THRU 1N4627-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LOW CURRENT OPERATION AT 250 µA • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

文件：112.4 Kbytes 页数：2 Pages

CDI-DIODE

500mW Low Noise Zener Diodes

Features •Low Current Operation at 250µA •Low Reverse Leakage •Low Noise Characteristics •Metallurgically Bonded •High temperature soldering guaranteed: 260˚C/10 seconds •RoHS Compliant

文件：357.68 Kbytes 页数：5 Pages

TAITRON

SILICON 500mW

MAXIMUM RATINGS Junction and Storage Temperatures: -65°C to +200°C DC Power Dissipation: 500mW Power Derating: 4.0mW/°C above 50°C in DO-35 Forward Voltage @ 200mA: 1.1 Volts 1N4099-1N4135 @ 100mA: 1.0 Volts 1N4614-1N4627

文件：1.19442 Mbytes 页数：3 Pages

DIGITRON