SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode

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SEMTECH_ELEC

先之科半导体

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

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SYNSEMI

High-speed diodes

FEATURES •Hermetically sealed leaded glass SOD68 (DO-34) package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 75 V •Repetitive peak reverse voltage: max. 75 V •Repetitive peak forward current: max. 450 mA.

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NEXPERIA

安世

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

文件：66.55 Kbytes 页数：2 Pages

EIC

Switching diode

文件：34.13 Kbytes 页数：2 Pages

ROHM

罗姆

Switching diode

文件：34.13 Kbytes 页数：2 Pages

ROHM

罗姆

High-speed diodes

The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. • Hermetically sealed leaded glass SOD68 (DO-34) package\n• High switching speed: max. 4 ns\n• Continuous reverse voltage: max. 75 V\n• Repetitive peak reverse voltage: max. 75 V\n• Repetitive peak forward current: max. 450 mA.;

Nexperia

安世

High-speed diodes

恩XP

Package：DO-204AG，DO-34，轴向；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 75V 125MA DO34

MICROSEMI

美高森美

PERFORMANCE SPECIFICATION

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.

文件：102.66 Kbytes 页数：19 Pages

MICROSEMI

美高森美