1N4151

SILICONPLANAREPITAXIALHIGHSPEEDDIODE

SILICONPLANAREPITAXIALHIGHSPEEDDIODE 500mW DO-35 GlassAxialPackage

1N4151

Small-SignalDiodeFastSwitchingDiode

Features ◆SiliconEpitaxialPlanarDiode ◆Fastswitchingdiode ◆Thisdiodeisalsoavailableinothercasestylesincludingthe MiniMELFcasewiththetypedesignationLL4151. MechanicalData ◆Case:DO-34,DO-35GlassCase ◆Weight:approx.0.13g

1N4151

HIGH-SPEEDSWITCHINGDIODE

FEATURES ●Highreliability ●Smallsurfacemountingtype APPLICATIONS ●Highspeedswitchandgeneralpurposeusein computerandindustrialapplications CONSTRUCTION ●Siliconepitaxialplanar

1N4151

SILICONEPITAXIALPLANARDIODES

SILICONEPITAXIALPLANARDIODES forgeneralpurposeandswitching

1N4151

SMALLSIGNALSWITCHINGDIODE

REVERSEVOLTAGE:50VCURRENT:0.15A FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation

1N4151

SmallSignalFastSwitchingDiodes

1N4151

HIGHSPEEDSWITCHINGDIODES

VOLTAGE：50-100VCURRENT：0.15to0.2A FEATURES •Siliconepitaxialplanardiodes •Lowpowerloss,highefficiency •Lowlekage •Lowforwardvoltagh •Highspeedswitching •Highcurrentcapability •Highreliability MECHANICALDATA •Case:Glasssealedcase •Lead:MIL-STD-202E,Metho

1N4151

50VDetectionswitchtube

1N4151

500mWEPITAXIALPLANARDIODES

Features ■PLANARPROCESS ■500mWPOWERDISSIPATION ■INDUSTRYSTANDARDDO-35PACKAGE ■MEETSULSPECIFICATION94V-0

1N4151

TECHNICALSPECIFICATIONSOFHIGHSPEEDSWITCHINGDIODES

VOLTAGERANGE-50to100VoltsCURRENT-0.075to0.2Ampere FEATURES *Siliconepitaxialplanardiodes *Lowleakage *Lowforwardvoltage *Highspeedswitching *Highcurrentcapability *Highreliability *Lowpowerloss,highefficiency