SILICON 400mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

文件：109.42 Kbytes 页数：2 Pages

MICROSEMI

美高森美

SILICON 500mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

文件：86.51 Kbytes 页数：2 Pages

MICROSEMI

美高森美

500mW LOW NOISE SILION ZENER DIODES

VOLTAGE RANGE 1.8 to 100 Volts FEATURES * Zener voltage 1.8 to 100 V * Low noise * Low reverse leakage

文件：181.54 Kbytes 页数：2 Pages

JGD

固锝电子

400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES

400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES

文件：196.46 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON PLANAR LOW NOISE ZENER DIODES

FEATURES • Low noise • Low reverse leakage

文件：212.41 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

500mW Low Noise Zener Diodes

Features •Low Current Operation at 250µA •Low Reverse Leakage •Low Noise Characteristics •Metallurgically Bonded •High temperature soldering guaranteed: 260˚C/10 seconds •RoHS Compliant

文件：357.68 Kbytes 页数：5 Pages

TAITRON

SILICON 500mW

MAXIMUM RATINGS Junction and Storage Temperatures: -65°C to +200°C DC Power Dissipation: 500mW Power Derating: 4.0mW/°C above 50°C in DO-35 Forward Voltage @ 200mA: 1.1 Volts 1N4099-1N4135 @ 100mA: 1.0 Volts 1N4614-1N4627

文件：1.19442 Mbytes 页数：3 Pages

DIGITRON

Consolidated shipping options

DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Power Dissipation PD 250 mW

文件：433.58 Kbytes 页数：3 Pages

CENTRAL

LOW CURRENT OPERATION AT 250 uA

• 1N4099-1 THRU 1N4135-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LOW CURRENT OPERATION AT 250 µ A • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • METALLURGICALLY BONDED

文件：98.4 Kbytes 页数：2 Pages

CDI-DIODE

LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS

文件：111.13 Kbytes 页数：2 Pages

MICROSEMI

美高森美