| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1N268 | GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 文件：2.79285 Mbytes 页数：78 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
1N268 | Gold Bonded Germanium Diodes in DO-7 Package Diode 文件：83.8 Kbytes 页数：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
1N268 | MECHANICAL Diode 文件：82.7 Kbytes 页数：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
1N268 | GOLD BONDED GERMANIUM DIODES | NJS | NJS |
详细参数
- 型号：
1N268
- 制造商：
Semitronics Corp
- 功能描述：
Rectifier Diode, 30 Volt, DO-7
更多1N268供应商
更新时间2026-1-17 10:02:00
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