丝印：1G*Package：SOT-23；NPN Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：216.64 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：1G*Package：SOT-323；45 V, 100 mA NPN general-purpose transistors

General description NPN general-purpose transistors in small plastic packages. Features ■ Low current ■ Low voltage ■ Three different gain selections Applications ■ General-purpose switching and amplification

文件：96.95 Kbytes 页数：15 Pages

恩XP

丝印：1G*Package：SOT-23；NPN Silicon AF Transistors

文件：183.85 Kbytes 页数：19 Pages

Infineon

英飞凌

丝印：1G*Package：SOT-323；45 V, 100 mA NPN general-purpose transistors

文件：104.72 Kbytes 页数：15 Pages

恩XP

丝印：1G*Package：SOT-323；45 V, 100 mA NPN general-purpose transistors

文件：104.72 Kbytes 页数：15 Pages

恩XP

丝印：1G**Package：SOT-23；HEXFET Power MOSFET

Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provi

文件：126.69 Kbytes 页数：9 Pages

IRF

丝印：1G**Package：SOT-23；N-Channel MOSFET

文件：1.46526 Mbytes 页数：5 Pages

KEXIN

科信电子