丝印：1EDN7146U；Package：PG-TSNP-7-11；200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

Infineon

英飞凌

丝印：1EDN7146U；Package：PG-TSNP-7-11；200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

Infineon

英飞凌

200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

Infineon

英飞凌