1EDF5673F中文资料英飞凌数据手册PDF规格书

描述 Description

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their on state. Besides, due to low threshold voltage and extremely fast switching transients, a negative off voltage level may be needed. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycle dependence of switching dynamics and the lack of negative gate drive in specific situations.

Infineons GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable a zero “off level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage not compatible with bootstrapping.

特性 Features

• Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products)

   – low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)

   – resistor programmable gate current (typ. 10 mA) in steady “on” state

   – programmable negative gate voltage to completely avoid spurious turn-on

• Single output supply voltage (typ. 8 V, floating)

• Switching behavior independent of duty-cycle (2 off voltage levels)

• Differential concept to ensure negative gate drive voltage under any condition

• Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns)

• Galvanic input-to-output isolation based on coreless transformer (CT) technology

• Common mode transient immunity (CMTI) > 200 V/ns

• 3 package versions

   – 1EDF5673K: 13-pin LGA (5 x 5 mm, PG-TFLGA-13-1) for functional isolation (1.5 kV)

   – 1EDF5673F: 16-pin P-DSO (150 mil, PG-DSO-16-11) for functional isolation (1.5 kV)

   – 1EDS5663H: 16-pin P-DSO (300 mil, PG-DSO-16-30) for reinforced isolation

• Fully qualified according to JEDEC for Industrial Applications