1ED3322MC12N隔离器的隔离器-栅极驱动器规格书PDF中文资料

1ED3322MC12N属于隔离器的隔离器-栅极驱动器。由英飞凌科技股份公司制造生产的1ED3322MC12N隔离器 - 栅极驱动器隔离器栅极驱动器是电源信号与外部 MOSFET 或桥接架构电路之间的接口。技术类型分为容性耦合、磁耦合和光耦合，提供 1、2 或 4 通道。电压隔离范围为 1000Vrms 至 7500Vrms，传播延迟范围为 30ns 至 5ms。

Features

• Single channel galvanically isolated coreless transformer (CT) gate driver

• Integrated protection features, such as short-circuit protection (DESAT), softoff,

active Miller Clamp and active shutdown

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

• Up to +6 A / -8.5 A typical peak output current

• 40 V absolute maximum output supply voltage VCC2

• High common-mode transient immunity CMTI > 300 kV/μs

• 85 ns short propagation delay (typ.)

• Tight IC-to-IC propagation delay matching (15 ns max.)

• 3.3 V and 5 V input supply voltage VCC1

• Suitable for operation at high ambient temperature and in fast switching

applications

• DSO-16 wide body package with 8 mm creepage

• Safety certification:

- UL 1577 (File E311313) with VISO,test = 6840 V (rms) for 1 s, VISO = 5700 V (rms)

for 60 s

- Reinforced insulation according to IEC 60747-17 (Certificate no. 40055138)

with VIORM = 1767 V (peak, reinforced)