1ED314XMU12F_V01中文资料英飞凌数据手册PDF规格书

Features

• Single-channel galvanically isolated coreless transformer based gate driver

• Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

• Up to 6.5 A typical peak output current

• 40 ns propagation delay with 7 ns part-to-part matching (skew)

• 35 V absolute maximum output supply voltage

• Very high (best-in-class) common-mode transient immunity CMTI > 300 kV/μs

• Active shutdown and short circuit clamping

• 150 mil DSO-8 and 300 mil LDSO-8 packages with CTI > 600

• 3.3 V and 5 V input supply voltage

• Suitable for operation at high ambient temperature and in fast switching applications

• UL 1577 certification VISO = 3.0 kV (rms) for 1 min (File E311313) for 1ED314xMU12F

• UL 1577 certification VISO = 5.7 kV (rms) for 1 min (File E311313), and IEC 60747-17 (VIORM = 1767 V)

(planned) for 1ED314xMC12H