19N10L中文资料友顺数据手册PDF规格书

DESCRIPTION

The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FEATURES

* RDS(ON)= 0.1Ω @VGS= 10 V

* Ultra low gate charge ( typical 19nC )

* Low reverse transfer Capacitance ( CRSS= typical 32pF )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness