High Performance Schottky Generation 5.0, 18 A

FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench t

文件：140.46 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Performance Schottky Generation 5.0, 18 A

文件：141.28 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Performance Schottky Generation 5.0, 18 A

FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench t

文件：140.46 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Performance Schottky Generation 5.0, 18 A

Vishay

威世