170C

型号：1.5SMC170CA；Package：DO-214AB；6.8 To 600V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features A Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability 1500WPeakpowercapabilityat10×1000μswaveformRepetition rate(dutycycle):0.01 Fastresponset

170C

型号：1.5SMC180CA；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features ■Forsurfacemountedapplicationsinordertooptimizeboardspace ■Lowprofilepackage ■Builtinstrainrelief ■Glasspassivatedjunction ■Lowinductance ■Excellentclampingcapability ■1500Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0

170A

型号：3.0SMC170A；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

170C

型号：3.0SMC170C；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

170CA

型号：3.0SMC170CA；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

170M11K0

型号：IMWH170R1K0M1；Package：PG-TO247-3-STD-NN4.8；CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features •VDSS=1700VatTvj=25°C •IDDC=5.4AatTC=25°C •RDS(on)=1000mΩatVGS=12V,Tvj=25°C •Optimizedforfly-backtopologies •12V/0Vgate-sourcevoltagecompatiblewithmostfly-backcontrollers •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS

170M1450

型号：IMWH170R450M1；Package：PG-TO247-3-STD-NN4.8；CoolSiC™ 1700 V SiC Trench MOSFET

Features •VDSS=1700VatTvj=25°C •IDDC=10AatTC=25°C •RDS(on)=450mΩatVGS=12V,Tvj=25°C •Optimizedforfly-backtopologies •12V/0Vgate-sourcevoltagecompatiblewithmostfly-backcontrollers •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(t

170M1650

型号：IMWH170R650M1；Package：PG-TO247-3-STD-NN4.8；CoolSiC™ 1700 V SiC Trench MOSFET

Features •VDSS=1700VatTvj=25°C •IDDC=7.5AatTC=25°C •RDS(on)=650mΩatVGS=12V,Tvj=25°C •Optimizedforfly-backtopologies •12V/0Vgate-sourcevoltagecompatiblewithmostfly-backcontrollers •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(

17005E

型号：MAX17005ETP；Package：QFN-204x4；1.2MHz Low-Cost, High-Performance Chargers

GeneralDescription TheMAX17005/MAX17006/MAX17015arehigh-frequencymultichemistrybatterychargers.Thesecircuitsfeatureanewhigh-frequencycurrent-modearchitecturethatsignificantlyreducescomponentsizeandcost*.Thechargerusesahigh-sideMOSFETwithn-channelsynchronousrectif

17006E

型号：MAX17006ETP；Package：QFN-204x4；1.2MHz Low-Cost, High-Performance Chargers

GeneralDescription TheMAX17005/MAX17006/MAX17015arehigh-frequencymultichemistrybatterychargers.Thesecircuitsfeatureanewhigh-frequencycurrent-modearchitecturethatsignificantlyreducescomponentsizeandcost*.Thechargerusesahigh-sideMOSFETwithn-channelsynchronousrectif