17

型号：PDTA113EK；Package：SC-59A；PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

17

型号：PDTC115TE；Package：SC-75；NPN resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistor *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

17

型号：PDTC115TU；Package：SC-70；NPN resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistor *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

17

型号：PDTC124ET；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA124ET 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducesco

17

型号：PDTC124ET-Q；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA124ET-Q 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reduces

17

型号：PJV1717_R1_00301；Package：SOT-723；20V P-Channel Enhancement Mode MOSFET

Features ●AdvancedTrenchProcessTechnology ●ESDProtected ●SpeciallyDesignedforSwitchLoad,PWMApplication,etc ●LeadfreeincompliancewithEURoHS2.0 ●GreenmoldingcompoundasperIEC61249standard MechanicalData ●Case:SOT-723Package ●Terminals:SolderableperMIL-S

17

型号：RLZ9.1B；Package：LLDS；Zener diode

17

型号：RLZ9.1B；Package：LLDS；Zener diode

17

型号：RLZ9.1B；Package：LLDS；Zener diode

17

型号：RLZ9.1B；Package：LLDS；Zener diode